Schottky diodes for analogue phase shifters in GaAs MMIC's

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 11, 1996, Pages 2112-2116

  Shepherd, P R ^a,b   Cryan, M J ^a,b  

^a UNIVERSITY OF BATH   (United Kingdom)

^b UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; FOUNDRY PRACTICE; PHASE SHIFTERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

FOUNDRY GALLIUM ARSENIDE PROCESS; INSERTION LOSS;

SCHOTTKY BARRIER DIODES;

EID: 0030290881     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.543970     Document Type: Article

References (9)

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