Surface acoustic waves in a gallium arsenide-conducting layer structure

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 43, Issue 6, 1996, Pages 1130-1132

  Zaitsev, B D ^a   Kuznetsova, I E ^a  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE VELOCITY; ANISOTROPY; BOUNDARY CONDITIONS; COMPUTATIONAL METHODS; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNETIC FIELDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ELECTROMECHANICAL COUPLING COEFFICIENT; ELECTRON ATTENUATION; SURFACE CONDUCTIVITY;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0030290384     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/58.542056     Document Type: Article

References (6)

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2. A. Schenstrom, Y. J. Qian, M. F. Xu, H. P. Baum, M. Levy, and B. K. Sarma, "Oscillations in the acousto-electric proximity coupling to a 2D electron gas," Solid State Commun., vol. 65, no. 7, pp. 739-742, 1988.
3. V. M. Bright, Y. Kirn, and W. D. Hunt, "Study of surface acoustic waves on the (110) plane of gallium arsenide," J. Appl. Phys., vol. 71, no. 2, pp. 597-605, 1992.
4. 4 (M = Sr, Ba)," Phvs. Rev., vol. B37, no. 1, pp. 118-122, 1988.
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6. W. A. Wooster, Tensors and Group Theory for Ike Physical Properties of Crystals Oxford" Clarendon, 1973