Interface formation during silicon deposition on noble metal substrates: A comparative AES study

Thin Solid Films

Volumn 288, Issue 1-2, 1996, Pages 182-185

  Lyubinetsky, I V ^a,c   Adamchuk, V K ^b  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Auger electron spectroscopy; Interfaces; Metals; Silicon

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; DEPOSITION; DIFFUSION IN SOLIDS; FILM GROWTH; GOLD; INTERFACES (MATERIALS); SEMICONDUCTING FILMS;

SILICON BONDS;

SEMICONDUCTING SILICON;

EID: 0030290349     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08858-X     Document Type: Article

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