Backgating reduction in MESFETs using an AlAs native oxide buffer layer

Electronics Letters

Volumn 32, Issue 24, 1996, Pages 2271-2273

  Bond, A E ^a   Lin, Chao Kun ^a   MacDougal, M H ^a   Dapkus, P D ^a   Kaviani, K ^a   Adamczyk, O ^a   Nottenburg, R ^a  

^a University of Southern California ^*  (United States)

Author keywords

MESFET; Oxidation

Indexed keywords

BUFFER CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; OXIDATION; SEMICONDUCTING GALLIUM ARSENIDE; THRESHOLD ELEMENTS;

BACKGATING THRESHOLD POTENTIAL;

MESFET DEVICES;

EID: 0030290224     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961529     Document Type: Article

References (15)

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