Metastable defects in as-grown and electron-irradiated Al0.3Ga0.7As

Semiconductor Science and Technology

Volumn 11, Issue 11, 1996, Pages 1692-1695

  Sobolev, M M ^a   Kochnev, I V ^a   Papentsev, M I ^a   Kalinovsky, V S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; KINETIC THEORY; OPTICAL PROPERTIES; PROBABILITY; SILICON;

METASTABLE DEFECTS; UNUSUAL ELECTRONIC AND OPTICAL PROPERTIES;

DEFECTS;

EID: 0030289972     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/11/009     Document Type: Article

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