Raman spectroscopic study of surface layer in fluorine-implanted Si

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 5509-5511

  Park, Yong Jik ^a   Mo, Yujun ^a   Kim, Jong Jean ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRIC RESISTANCE MEASUREMENT; FLUORINE; ION IMPLANTATION; ORDER DISORDER TRANSITIONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SURFACES; THERMAL EFFECTS;

ARGON LASERS; LASER BEAM SKIMMING; LORENTZIAN SPLITTING; THERMAL ORDERING EFFECT;

SEMICONDUCTING SILICON;

EID: 0030289783     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363483     Document Type: Article

References (15)