The influence of bias on gaseous composition and diamond growth in a hot-filament chemical vapour deposition process

Journal of Physics D: Applied Physics

Volumn 29, Issue 11, 1996, Pages 2759-2762

  Cui, J B ^a   Fang, R C ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONS; FILM GROWTH; NUCLEATION; SUBSTRATES; SURFACE STRUCTURE;

DIAMOND GROWTH;

SYNTHETIC DIAMONDS;

EID: 0030289738     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/11/006     Document Type: Article

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