Grain growth of dense Si-C-N/additive and SiC at high temperatures

Journal of Materials Science Letters

Volumn 15, Issue 22, 1996, Pages 1960-1962

  Kaiser, A ^a   Vassen, R ^a   Stover D ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; DENSITY (SPECIFIC GRAVITY); GRAIN SIZE AND SHAPE; HEAT TREATMENT; HOT ISOSTATIC PRESSING; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SILICON NITRIDE; THERMAL EFFECTS;

EXAGGERATED GRAIN GROWTH;

GRAIN GROWTH;

EID: 0030289553     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00274349     Document Type: Article

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