Investigation by AES and EELS of ZnO/InP (100) and SnO2/Ag

Vacuum

Volumn 47, Issue 11, 1996, Pages 1353-1359

  Bouslama, M ^a   Ghamnia, M ^b   Jardin, C ^c   Bouderbala, M ^d   Gruzza, B ^e  

^a NATIONAL POLYTECHNIC SCHOOL OF ORAN   (Algeria)

^b UNIVERSITY OF ORAN   (Algeria)

^c UNIVERSITÉ LYON 1   (France)

^d UNIVERSITÉ DES SCIENCES ET DE LA TECHNOLOGIE D ORAN MOHAMED BOUDIAF   (Algeria)

^e UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILVER; SPUTTER DEPOSITION; SUBSTRATES; THIN FILM CIRCUITS; ZINC OXIDE;

CATHODIC RADIOFREQUENCY SPUTTERING; PLASMONS;

SEMICONDUCTING FILMS;

EID: 0030289286     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(96)00176-5     Document Type: Article

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