Growth and characterization of CeO2 films on sapphire substrates by sputtering process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 11, 1996, Pages 5805-5810

  Lin, Ran Jin ^a,b   Chen, Lih Juann ^a   Lin, Lih Jiaun ^b   Yu, Yueh Chung ^c   Wang, Chang Wan ^c   Lin, Erh Kang ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

CeO2; Films; Sapphire substrate; Sputtering; Superconductor; YBCO

Indexed keywords

CRYSTALLINITY; GAS PRESSURE EFFECT; SAPPHIRE SUBSTRATE;

ANNEALING; CERIUM COMPOUNDS; CHARACTERIZATION; CRYSTAL ORIENTATION; FILM GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; MAGNETRON SPUTTERING; MORPHOLOGY; OXIDE SUPERCONDUCTORS; PRESSURE EFFECTS; SAPPHIRE; THERMAL EFFECTS;

SUPERCONDUCTING FILMS;

EID: 0030289103     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5805     Document Type: Article

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