|
Volumn 44, Issue 2, 1996, Pages 119-155
|
Calculation of the photocurrent-potential characteristic for regenerative, sensitized semiconductor electrodes
|
Author keywords
I V characteristics; Photoelectrochemical cells; Semiconductor device models; Sensitization; Titanium dioxide
|
Indexed keywords
BAND STRUCTURE;
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTROLYTES;
LIGHT ABSORPTION;
PARTICLE BEAM INJECTION;
PHOTOELECTROCHEMICAL CELLS;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
TITANIUM DIOXIDE;
ELECTRON INJECTION;
GURNEY GERISHER MARCUS MODEL;
HELMHOLTZ POTENTIAL;
NERNST EQUATION;
QUASIREVERSIBLE POTENTIAL;
RADIATIVE DECAY;
REDOX ELECTROLYTES;
REORGANIZATION ENERGY;
SENSITIZATION;
SENSITIZER REGENERATION;
ELECTRODES;
|
EID: 0030288726
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/0927-0248(96)00036-0 Document Type: Article |
Times cited : (118)
|
References (20)
|