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Volumn 44, Issue 2, 1996, Pages 119-155

Calculation of the photocurrent-potential characteristic for regenerative, sensitized semiconductor electrodes

Author keywords

I V characteristics; Photoelectrochemical cells; Semiconductor device models; Sensitization; Titanium dioxide

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLYTES; LIGHT ABSORPTION; PARTICLE BEAM INJECTION; PHOTOELECTROCHEMICAL CELLS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; TITANIUM DIOXIDE;

EID: 0030288726     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(96)00036-0     Document Type: Article
Times cited : (118)

References (20)
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    • S. Trassatti. Pure and Appl. Chem. 58 (1986) 955; J. Electroanal. Chem. 209 (1986) 417.
    • (1986) J. Electroanal. Chem. , vol.209 , pp. 417
  • 10
  • 11
    • 4243180385 scopus 로고
    • D.B. Matthews. Aust. J. Chem. 47 (1994) 2171; 48 (1995) 1843; 48 (1995) 1853.
    • (1995) Aust. J. Chem. , vol.48 , pp. 1843
  • 12
    • 84887074465 scopus 로고
    • D.B. Matthews. Aust. J. Chem. 47 (1994) 2171; 48 (1995) 1843; 48 (1995) 1853.
    • (1995) Aust. J. Chem. , vol.48 , pp. 1853


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.