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Journal of Crystal Growth

Volumn 169, Issue 1, 1996, Pages 40-50

High quality CaF2 layers on Si(111) with type-A epitaxial relation at the interface

(8) Sokolov, N S a Alvarez, J C a Gastev, S V a Shusterman, Yu V a Takahashi, I b Itoh, Y b Harada, J c Overney, R M d

a IOFFE INSTITUTE (Russian Federation)

b NAGOYA UNIVERSITY (Japan)

c UNIVERSITY OF ELECTRO COMMUNICATIONS (Japan)

d EXXONMOBIL UPSTREAM RESEARCH COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CALCIUM COMPOUNDS; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; HETEROJUNCTIONS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; X RAY DIFFRACTION;

CRYSTAL PERFECTION; LOW TEMPERATURE GROWTH; PSEUDOMORPHIC STRUCTURES;

MOLECULAR BEAM EPITAXY;

EID: 0030288442 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00346-6 Document Type: Article

Times cited : (8)

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