Survivability of a silicon-based microelectronic gas-detector structure for high-temperature flow applications

Sensors and Actuators, B: Chemical

Volumn 37, Issue 1-2, 1996, Pages 27-35

  Patel, Sanjay V ^a   DiBattista, Michael ^a   Gland, John L ^a   Schwank, Johannes W ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

High temperature; Microelectronic sensors; Structural stability; Survivability

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRIC RESISTANCE MEASUREMENT; EQUIPMENT TESTING; HIGH TEMPERATURE APPLICATIONS; MECHANICAL PROPERTIES; MICROELECTRONICS; OPTICAL MICROSCOPY; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC STABILITY;

MICROELECTRONIC SENSORS; MICROMACHINED SILICON STRUCTURE; STRUCTURAL STABILITY; SURVIVABILITY;

SILICON SENSORS;

EID: 0030288344     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(97)80069-X     Document Type: Article

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