Properties of laser ablated porous silicon

Applied Physics Letters

Volumn 69, Issue 20, 1996, Pages 3048-3050

  Savin, D P ^a   Roizin, Ya O ^a   Demchenko, D A ^a   Mugenski E ^b   Sokolska I ^b  

^a ODESSA NATIONAL UNIVERSITY   (Ukraine)

^b INSTITUTE OF LOW TEMPERATURE AND STRUCTURE RESEARCH   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; ELECTROCHEMISTRY; LASER ABLATION; OPTICAL FILMS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE;

ELECTROCHEMICALLY ETCHED POROUS SILICON; LASER ABLATED POROUS SILICON; NITROGEN LASERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM CONFINEMENT;

POROUS SILICON;

EID: 0030287345     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116835     Document Type: Article

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