Self-convergence erase for NOR flash EEPROM using avalanche hot carrier injection

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1937-1941

  Yamada, Seiji ^a   Yamane, Tomoko ^a   Amemiya, Kazumi ^a   Naruke, Kiyomi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTOR DOPING;

AVALANCHE HOT ELECTRON INJECTION; AVALANCHE HOT HOLE INJECTION; FOWLER-NORDHEIM (FN) TUNNELING CURRENT; THRESHOLD VOLTAGES;

ROM;

EID: 0030287083     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543030     Document Type: Article

References (13)

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