Substrate effects on the epitaxial growth of AlN thin films using electron cyclotron resonance plasma enhanced chemical vapor desposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 11 SUPPL. B, 1996, Pages

  Soh, Ju Won ^a   Kim, Jin Hyeok ^a   Lee, Won Jong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Aluminum nitride; ECR PECVD; Epitaxial growth; Piezoelectric; Thin film

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); NITRIDES; SEMICONDUCTING SILICON; SILICA; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE THIN FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON OXIDE LAYER; SUBSTRATE EFFECTS;

THIN FILMS;

EID: 0030286912     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1518     Document Type: Article

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