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Volumn 367, Issue 1, 1996, Pages 56-66
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Atomic structures and atomic dynamics on "1 × 1" Si(111) at high temperatures
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Author keywords
Atomistic dynamics; Computer simulations; Diffusion and migration; Low index single crystal surfaces; Silicon; Surface diffusion; Surface melting
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Indexed keywords
COMPUTATIONAL METHODS;
COMPUTER SIMULATION;
CRYSTAL ATOMIC STRUCTURE;
DIFFUSION IN SOLIDS;
HIGH TEMPERATURE EFFECTS;
MELTING;
MONTE CARLO METHODS;
SINGLE CRYSTALS;
SURFACE PROPERTIES;
SURFACE STRUCTURE;
ATOMISTIC DYNAMICS;
EVAPORATION RATE;
LOW INDEX SINGLE CRYSTAL SURFACES;
SILICON ADATOM;
SURFACE DIFFUSION COEFFICIENT;
SURFACE POTENTIAL MAP;
TERSOFF DODSON INTERATOMIC POTENTIAL;
SEMICONDUCTING SILICON;
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EID: 0030286182
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(96)00843-6 Document Type: Article |
Times cited : (15)
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References (34)
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