Characterization and application of a low-profile metal-semiconductor-metal detector for low energy backscattered electrons

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3821-3824

  Meier, G D ^a   Fresser, H S ^a   Prins, F E ^a   Kern, D P ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS; GEOMETRY; IMAGE RECORDING; NICKEL; PERFORMANCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SIGNAL TO NOISE RATIO;

BACKSCATTERED ELECTRON DETECTORS; METAL SEMICONDUCTOR METAL STRUCTURES; MICROCOLUMNS;

PARTICLE DETECTORS;

EID: 0030285984     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588674     Document Type: Article

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