A steady-state approach to determine diffusion coefficients: The migration of silicon on the Si(100) surface

Surface Science

Volumn 366, Issue 3, 1996, Pages 483-490

  Aldao, C M ^a   Iguain, J L ^a   Martin H O ^a  

^a UNIVERSIDAD NACIONAL DE MAR DEL PLATA   (Argentina)

Author keywords

Atomistic dynamics; Silicon; Surface diffusion

Indexed keywords

MATHEMATICAL MODELS; RANDOM PROCESSES; SILICON; SURFACE PHENOMENA;

ATOMISTIC DYNAMICS; STEADY STATE METHOD; STILLINGER WEBER POTENTIALS; STOCHASTIC KINETIC SIMULATIONS;

DIFFUSION IN SOLIDS;

EID: 0030285892     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00828-X     Document Type: Article

References (8)

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