Préparation et caractérisation de couches minces d'oxynitrure de phosphore destinées à la passivation d'InP

Journal de Physique III

Volumn 6, Issue 11, 1996, Pages 1489-1506

  Hbib, H ^a   Bonnaud, O ^a   Quemerais, A ^a   Gauneau, M ^b   Adam, J L ^a   Marchand, R ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; FILM GROWTH; FILM PREPARATION; INTERFACES (MATERIALS); LIGHT ABSORPTION; PHOSPHORUS COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL BAND GAP; PHOSPHORUS OXYNITRIDE;

SEMICONDUCTING FILMS;

EID: 0030285579     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1996198     Document Type: Article

References (34)

1. 3 - InP metal-insulator-semiconductor prepared in excess organophosphorus atmospher, J. Appl. Phys. 55 (1984) 3876-3878.
2. Pande K. P. and Gutierrez D., Channel mobility enhacement in InP metal - insulator - semiconductor field-effect transistors, Appl. Phys. Lett. 46 (1985) 416-418.
3. Choujaa A., Chave J., Blanchet R. and Viktorovitch P., Electronical properties of metal-insulator-semiconductor devices prepared on thermally treated InP in phosphorus overpressure, J. Appl. Phys. 60 (1986) 2191-2193.
4. Blanchet R., Viktorovitch P., Choujaa A., Chave J. et Santinelli C., Passivation de la surface de phosphure d'indium par des élements de la colonne V, Rev. Phys. Appl. 22 (1987) 279-283.
5. 3 deposition: Correlations between interface chemistry and capacitance mesurements, J. Appl. Phys. 67 (1990) 4173-4182.
6. Iyer R., Chang R. R. and Lile D. L., Sulfur as a surface passivation for InP, Appl. Phys. Lett. 53 (1988) 134-136.
7. Wilmsen C. W., Geib K. M., Shin J., Iyer R., Lile D. and Pouch J. J., The sulfurized InP surface, J. Vac. Sci. Technol. B 7 (1989) 851-853.
8. Furukawa Y., Chemical Vapor Deposition of Phosphorus Nitride and related compounds, Jap. J. Appl. Phys. 23 (1984) 1157-1158.
9. Jeong Y. H., Kim G. T., Kim S. T., Kim I. I. and Chung W. J., Effects of photochemical vapor deposition phosphorus - nitride interfacial layer on electrical characteristics of AuInP Schottky diodes, J. Appl. Phys. 69 (1991) 6699-6700.
10. Hirota Y., Okamura M., Yamagushi E. and Hisaki T., Film deposition température dependance of electron mobility for accumulation - mode InP metal - insulator - semiconductor field - effect transistors, J. Appl. Phys. 65 (1989) 1328-1336.
11. Hattori K. and Torii Y., A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer, Solid. Stat. Electron. 34 (1991) 527-531.
12. o 8708962 (1987).
13. Dang T. Q., Le Bloa A., Hbib H., Bonnaud O., Meinnel J., Quemerais J. et Marchand R., Couches minces d'oxynitrure de phosphore. Application aux structures MIS sur InP, Rev. Phys. Appl. 24 (1989) 545-551.
14. z interfacial layer, Solid. Stat. Electron. 36 (1993) 339-344.
15. Guivarc'h A., L'Haridon H., Pelous G., Hollinger G. and Pertosa P., Chemical cleaning of InP surfaces: Oxide composition and electrical properties, J. Appl. Phys. 55 (1984) 1139-1148.
16. Dang T. Q., Hbib H., Meinnel J., Bonnaud O., Falchier P., Marchand R. et Quemerais A., Préparation des couches minces sur InP par evaporation de PON massif, Le vide, les couches minces 43 (1988) 239-240.
17. Klopfenstein P., Bastide G., Rouzeyre M., Gendry M. and Durand J., Interface studies and electrical properties of plasma sulfide layers on n-type InP, J. Appl. Phys. 63 (1988) 150-158.
18. Bath A., Van Der Put P. J., Becht J. G. M., Schoonman J. and Lepley B., Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP, J. Appl. Phys. 70 (1991) 4366-4370.
19. Leclercq J. L., Durand L., Cot L., Berjoan R. and Dupuy C., Plasma-enhanced chemical vapor deposition of phosphorus nitride thin films: Auger spectroscopy characterization, Appl. Surf. Sci. 59 (1992) 289-297.
20. Boukbir L., Préparation et étude de nouveaux matériaux présentant des liaisons phosphore - azote. Verres azotés de phosphates, Thèse, Université de Rennes I (1987).
21. Agliz D., Contribution à l'étude par spectroscopie de photoélectrons excités par rayons X, des surfaces de semi-conducteurs III-V : oxygène implanté dans GaAs : composés oxygénés et oxynitrurés du phosphore, Thèse, Université de Rennes I (1987).
22. Hollinger G., Bergignat E., Joseph J. and Robach Y., On the nature of oxides on InP surface, J. Vac. Sci. Technol. A 3 (1985) 2082-2088.
23. Veprek S., Iqbal Z., Brunner J. and Schärli M., Preparation and properties of amourphous phosphorus nitride prepared in low-pressure plasma, Philos. Mag. B 43 (1981) 527-547.
24. Hirota Y., Hisaki T. and Mikami O., Photochemical vapor deposition and characterization of phosphorus nitride gate insulator for inversion - mode InP MISFETs, Ins. Phys. Conf. Ser. 79 (1985) 313-318.
25. Saoudi R., Hollinger G., Gagnaire A., Pitaval M. et Molle P., Étude physicochimique et structurale de nitrures et d'oxynitrures de silicium très minces formés par traitement thermique rapide, J. Phys. III France 5 (1995) 557-573.
26. y - InP metal - insulator - semiconductor structures, J. Appl. Phys. 69 (1991) 3130-3134.
27. z - InP interface, Solid. Stat. Electron. 34 (1991) 781-785.
28. 5) gate insulators for InP metal - insulator - semiconductor devices, J. Appl. Phys. 53 (1982) 5037-5043.
29. Hirota Y. and Mikami O., Photochemical vapour deposition of phosphorus nitride using an ArF Excimer laser, Electron. Lett. 21 (1985) 77-78.
30. Jeong Y. H., Shinishi T., Arai F. and Sugano T., Effects on InP surface trap states of in situ etching and phosphorus - nitride deposition, J. Appl. Phys. 62 (1987) 2370-2375.
31. Ishihara R., Sugiura O. and Matsumura M., Low - temperature chemical vapor deposition of boron - nitride films using hydrogen azide, Appl. Phys. Lett. 60 (1992) 3244-3246.
32. Bhattacharya P. and Bose D. N., Laser deposition of AlN Thin Films on InP and GaAs, Jap. J. Appl. Phys. 30 (1991) L1750-L1752.
33. Li P. C. and Hsia L. C., CVD growth and properties of "Phoslon" dielectric films, J. Electochem. Soc. : Solid-State Sci and Technol. 133 (1986) 366-372.
34. Yamaguchi E. and Minakata M., Study of boron nitride gate insulators onto InP grown by low-temperature chemical vapor deposition, J. Appl. Phys. 55 (1984) 3098-3102.