Effect of a vacuum ion gauge on the contamination of a hydrogen-passivated silicon surface

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 6, 1996, Pages 3189-3193

  Yun, Sun Jin ^a   Lee, Seung Chang ^a   Lee, Jae Jin ^a   Lee, Jeong Yong ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CONTAMINATION; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; HYDROGEN; IONS; PASSIVATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

HYDROGEN PASSIVATED SILICON SURFACE; VACUUM ION GAUGE; ZINC BLENDE STRUCTURE;

VACUUM GAGES;

EID: 0030285539     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580211     Document Type: Article

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