Influence of carrier transport/capture and gain flattening in picosecond pulse generation of InGaAs microcavity lasers

Applied Physics Letters

Volumn 69, Issue 21, 1996, Pages 3137-3139

  Sogawa, F ^a   Hangleiter, A ^a,b   Watabe, H ^a   Nagamune, Y ^a   Nishioka, M ^a   Arakawa, Y ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRONIC DENSITY OF STATES; EQUATIONS OF MOTION; LASER PULSES; OPTICAL PUMPING; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER CAPTURE; CARRIER TRANSPORT; GAIN FLATTENING; MICROCAVITY LASERS; PICOSECOND PULSES; RATE EQUATIONS;

SEMICONDUCTOR LASERS;

EID: 0030285451     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116807     Document Type: Article

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