Simulation model to very low pressure chemical vapor deposition of SiGe alloy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 6, 1996, Pages 3256-3260

  Gu, Shulin ^a   Wang, Ronghua ^a   Zhang, Rong ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; COMPOSITION; COMPUTER SIMULATION; CRYSTAL GROWTH; DESORPTION; GERMANIUM; HYDRIDES; PRESSURE; SILICON ALLOYS; SURFACES; THERMAL EFFECTS;

KINETICS MODEL; VERY LOW PRESSURE CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0030285175     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580222     Document Type: Article

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