Switching characteristics of MCT's and IGBT's in power converters

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1994-2003

  Trivedi, Malay ^a   Pendharkar, S ^a   Shenai, K ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC LOSSES; FINITE ELEMENT METHOD; MOS DEVICES; PLASMA STABILITY; POWER CONVERTERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR SWITCHES; THYRISTORS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOS CONTROLLED THYRISTORS (MCT);

BIPOLAR TRANSISTORS;

EID: 0030285168     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543038     Document Type: Article

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