Different dependence of band-to-band and Fowler-Nordheim tunneling on source doping concentration of an n-MOSFET

IEEE Electron Device Letters

Volumn 17, Issue 11, 1996, Pages 525-527

  Tang, Yuan ^a   Chen, Jian ^a   Chang, Chi ^a   Liu, David ^a   Haddad, Sameer ^a   Sun, Yu ^a   Wang, Arthur ^a   Ramskey, Mark ^a   Kwong, Ming ^a   Kinoshita, Hiroyuki ^a   Chan, Wei Han ^a   Lien, Jih ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; COMPOSITION; ELECTRIC CURRENTS; ELECTRON TUNNELING; NUMERICAL METHODS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BAND TO BAND TUNNELING; FOWLER NORDHEIM TUNNELING; GATE OXIDE; SILICON BAND BENDING; SOURCE DOPING CONCENTRATION;

MOSFET DEVICES;

EID: 0030284603     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.541769     Document Type: Article

References (9)

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