High-coupling-efficient 1.3-μm laser diodes with good temperature characteristics

IEEE Journal of Quantum Electronics

Volumn 32, Issue 11, 1996, Pages 1959-1963

  Fukano, Hideki ^a,b,c,d,e,f   Yokoyama, Kiyoyuki ^{a,b,c,f,g,h,i,j}   Kadota, Yoshiaki ^b   Kondo, Yasuhiro ^a,b   Ueki, Mineo ^b   Yoshida, Junichi ^a,b  

^a IEEE

^b NTT CORPORATION   (Japan)

^c Toyohashi University of Technology ^*

^d TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^f OSAKA UNIVERSITY   (Japan)

^g UNIVERSITY OF TOKYO   (Japan)

^h Musashino Electrical Communication Lab   (Japan)

ⁱ UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^j AMERICAN PHYSICAL SOCIETY   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

CARRIER CONFINEMENT; CORE LAYER WIDTHS; COUPLING EFFICIENCY; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 0030284445     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.541682     Document Type: Article

References (18)

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