100-mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure

IEEE Journal of Quantum Electronics

Volumn 32, Issue 11, 1996, Pages 1981-1986

  Takayama, Toni ^b,c,d,e   Imafuji, Osamu ^b   Kouchi, Yasuyuki ^b   Yuri, Masaaki ^a,b   Yoshikawa, Akio ^b   Itoh, Kunio ^b  

^a IEEE

^b PANASONIC CORPORATION   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d Electronics Research Laboratory   (Japan)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT REFLECTION; LIGHT SOURCES; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

CURRENT INJECTION STRIPE; FULL WIDTH AT HALF MAXIMUM; REFRACTIVE INDEX GUIDED SELF ALIGNED STRUCTURE; SUPERLUMINESCENT DIODES;

SEMICONDUCTOR LASERS;

EID: 0030284409     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.541685     Document Type: Article

References (34)

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3. N. S. K. Kwong, K. Y. Lau, and N. Bar-Chaim, "High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression," IEEE J. Quantum. Electron., vol. 25, pp. 696-704, 1989.
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8. T. Takayama, O. Imafuji, H. Sugiura, M. Yuri, H. Naito, M. Kume, and K. Itoh, "Low-noise and high-power GaAlAs laser diodes with a new real refractive index guided structure," Jpn. J. Appl. Phys., vol. 34, pp. 3533-3542, 1995.
9. T. Takayama, O. Imafuji, M. Yuri, H. Naito, M. Kume, A. Yoshikawa, and K. Itoh, "800 mW peak-power self-sustained pulsation GaAlAs laser diodes," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 562-568, 1995.
10. T. Takayama., O. Imafuji, Y. Kouch, M. Yun, M. Kume, A. Yoshikawa, and K. Itoh, "100 mW high-power angled-stripe superluminescent diodes with a new real refractive index guided self-aligned structure," IEEE IEDM Teck. Dig., 1995, pp. 567-570.
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18. G. A. Alphonse, D. B. Gilbert, M. G. Harvey, and M. Ettenberg, "High-power superluminescent diodes," IEEE J. Quantum. Electron., vol. 24, pp. 2454-2457, 1988.
19. N. K. Dutta and P. P. Deimel, "Optical properties of a GaAlAs superluminescent diode," IEEE J. Quantum Electron., vol. QE-19, pp. 496-498, 1983.
20. N. S. K. Kwong, K. Y. Lau, and N. Bar-Chaim, "High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression," IEEE J. Quantum. Electron., vol. 25, pp. 696-704, 1989.
21. C. S. Wang, W. H. Chen, C. J. Hwang, W. K. Burns, and R. P. Moeller, "High-power low-divergence superradiance diode," Appl. Phys. Lett., vol. 41, pp. 587-589, 1982.
22. K. Tateoka, H. Naito, M. Yuri, M. Kume, K. Hamada, H. Shimizu, M. Kazumura, and I. Teramoto, "A high-power GaAlAs superluminescent diode with an antireflective window structure," IEEE J. Quantum. Electron., vol. 27, pp. 1568-1573, 1991.
23. L. Goldberg and D. Mehuys, "High power superluminescent diode source," Electron. Lett., vol. 30, pp. 1682-1684, 1994.
24. O. Imafuji, T. Takayama, H. Sugiura, M. Yuri, H. Naito, M. Kume, and K. Itoh, "600 mW CW single mode GaAlAs triple-quantum-well laser with a new index guided structure," IEEE J. Quantum Electron., vol. 29, pp. 1889-1894, 1993.
25. T. Takayama, O. Imafuji, H. Sugiura, M. Yuri, H. Naito, M. Kume, and K. ltoh, "Low-noise and high-power GaAlAs laser diodes with a new real refractive index guided structure," Jpn. J. Appl. Phys., vol. 34, pp. 3533-3542, 1995.
26. T. Takayama, O. Imafuji, M. Yuri, H. Naito, M. Kume, A. Yoshikawa, and K. Itoh, "800 mW peak-power self-sustained pulsation GaAlAs laser diodes," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 562-568, 1995.
27. T. Takayama., O. Imafuji, Y. Kouch, M. Yun, M. Kume, A. Yoshikawa, and K. Itoh, "100 mW high-power angled-stripe superluminescent diodes with a new real refractive index guided self-aligned structure," IEEE IEDM Teck. Dig., 1995, pp. 567-570.
28. B. Garret and J. E. A. Whiteaway, "Setf stabilization of the fundamental lateral mode in index-guided semiconductor lasers," Proc. Inst. Elect. Eng., vol. 134, no. 1. pp 1-15, 1987.
29. K. Hamada, M. Wada, H. Shimizu, M. Kume, F. Fusa, T. Shibutani, N. Yoshikawa, K. Itoh, G. Kano, and I. Teramoto, "A 0.2 W CW laser with buried Twin-ridge substrate structure," IEEE J. Quantum Electron., vol. QE-21, pp. 623-628, 1985.
30. S. lida, K. Tanaka, and Y. Unno, "Spectral behavior and line width of (GaAl)As-GaAs double heterostructure lasers at room temperature with stripe geometry configuration," IFFE J. Quantum Electron., vol. QE-9, pp. 361-366, 1973.
31. A. Icsevgi and W. E. Lamb, "Propagation of light pulses in a laser amplifier," Phys. Rev., vol. 185, pp. 517-545, 1969.
32. P. A. Morton, R. J. Helkey, and J. E. Bowers, "Dynamic detuning in actively mode-locked lasers," IEEE J. Quantum Electron., vol. 25, pp. 2621-2633, 1989.
33. 1-x As double heterostructure planar laser," Jpn. J. Appl. Phys., vol. 12, p. 1585, 1973.
34. M. Yamada and H. Ishignro, "Gain calculation of undoped GaAs injection laser taking account of electronic intra-band relaxation," Jpn. J. Appl. Phys., vol. 20, pp. 1279-1288, 1981.