Tuning characteristics of monolithic passively mode-locked distributed Bragg reflector semiconductor lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 11, 1996, Pages 1965-1975

  Liu, Hai Feng ^a,b,c,d,e   Arahira, Shin ^c,f   Kunii, Tatsuo ^c,e   Ogawa, Yoh ^c,g,h  

^a IEEE

^b UNIVERSITY OF MELBOURNE   (Australia)

^c OKI ELECTRIC INDUSTRY CO   (Japan)

^d BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^e UNIVERSITY OF TOKYO   (Japan)

^f WASEDA UNIVERSITY   (Japan)

^g TOHOKU UNIVERSITY   (Japan)

^h JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED BRAGG REFLECTOR SEMICONDUCTOR LASERS; INJECTION CURRENT; PULSE REPETITION FREQUENCIES; REVERSE BIAS VOLTAGE;

LASER MODE LOCKING; LASER MODES; LASER PULSES; LASER TUNING; LIGHT ABSORPTION; LIGHT REFLECTION; PHASE CONTROL; REFRACTIVE INDEX; THERMAL EFFECTS;

SEMICONDUCTOR LASERS;

EID: 0030284368     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.541683     Document Type: Article

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