Structural and electrical properties of Ni-Cu films deposited onto MgO(001) by d.c. biased plasma sputter deposition

Thin Solid Films

Volumn 288, Issue 1-2, 1996, Pages 171-175

  Qiu, H ^a   Hashimoto, M ^a   Barna, A ^b   Barna, P B ^b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Alloys; Epitaxy; Sputtering; Transmission electron microscopy (TEM)

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; FILM GROWTH; NICKEL ALLOYS; SPUTTER DEPOSITION; STRUCTURE (COMPOSITION); TEMPERATURE MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

DC BIASED PLASMA SPUTTER DEPOSITION; FACE CENTER CUBIC (FCC) LATTICE; TEMPERATURE COEFFICIENT OF ELECTRICAL RESISTANCE (TCR);

SEMICONDUCTING FILMS;

EID: 0030283928     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08813-X     Document Type: Article

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