Insertion-loss-free 1×4 optical switch fabricated using bandgap-energy-controlled selective MOVPE

Electronics Letters

Volumn 32, Issue 24, 1996, Pages 2265-2266

  Hamamoto, K ^a   Sasaki, T ^a   Matsumoto, T ^a   Komatsu, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Photonic switching; Semiconductor optical amplifiers; Vapour phase epitaxial growth

Indexed keywords

ELECTRIC CURRENTS; ENERGY GAP; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS;

METAL ORGANIC VAPOUR PHASE EPITAXY;

OPTICAL SWITCHES;

EID: 0030283654     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961499     Document Type: Article

References (5)

1. VAN BERLO, W., JANSON, M., LUNDGREN, L., MÖRNER, A.-C., TERLECKI, J., GUSTAVSSON, M., GRANESTRAND, P., and SVENSSON, P.: "Polarisation-insensitive, monolithic 4×4 InGaAsP-InP laser amplifier gate switch matrix", IEEE Photonics Technol. Lett., 1995, 7, (11), pp. 1291-1293
2. HAMAMOTO, K., and KOMATSU, K.: 'Insertion-loss-free 2×2 InGaAsP/ InP optical switch fabricated using bandgap energy controlled selective MOVPE', Electron. Lett., 1995, 31, (20), pp. 1779-1781
3. KIRIHARA, T., OGAWA, M., INOUE, H., KODERA, H., and ISHIDA, K.: 'Lossless and low-crosstalk characteristics in an InP-based 4×4 optical switch with integrated single-stage optical amplifiers", IEEE Photonics Technol. Lett., 1994, 6, (2), pp. 218-221
4. KATO, T., SASAKI, T., KIDA, N., KOMATSU, K., and MITO, I.: 'Novel MQW DFB laser diode/modulator integrated light source using bandgap energy control epitaxial growth technique'. 17th ECOC, Paris, France, 1991, 1, pp. 429-432 Regular Papers, part 2
5. KITAMURA, S., KOMATSU, K., and KITAMURA, M.: 'Very low power consumption semiconductor optical amplifier array', IEEE Photonics Technol. Lett., 1995, 7, (2), pp. 147-148