Chemical vapour deposition of silicon nitride in a microwave plasma assisted reactor

Journal of Materials Science

Volumn 31, Issue 22, 1996, Pages 6029-6033

  Monteiro, O R ^a   Wang, Zhi ^a   Brown, I G ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ETCHING; HIGH TEMPERATURE EFFECTS; METHANE; MORPHOLOGY; NITROGEN; PLASMA APPLICATIONS; PRESSURE EFFECTS; REACTION KINETICS; SILICON WAFERS;

INTERMEDIATE METHANE CONTENT; MICROWAVE PLASMA ASSISTED REACTOR;

SILICON NITRIDE;

EID: 0030283501     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01152155     Document Type: Article

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