Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions

Superconductor Science and Technology

Volumn 9, Issue 11, 1996, Pages 978-984

  Verbist, K ^a   Lebedev, O I ^a,c   Van Tendeloo, G ^a   Verhoeven, M A J ^b   Rijnders, A J H M ^b   Blank, D H A ^b  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BARIUM COMPOUNDS; CRYSTAL DEFECTS; ETCHING; HIGH TEMPERATURE SUPERCONDUCTORS; INTERFACES (MATERIALS); ION BEAM LITHOGRAPHY; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAM ETCHING;

JOSEPHSON JUNCTION DEVICES;

EID: 0030282813     PISSN: 09532048     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-2048/9/11/009     Document Type: Article

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