Electron-phonon interaction spectra of TaSi2, NbSi2 and VSi2

Solid State Communications

Volumn 100, Issue 5, 1996, Pages 293-296

  Balkashin, O P ^a,b   Jansen, A G M ^a   Gottlieb, U ^c,d   Laborde, O ^c   Madar, R ^d  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

^c CNRS   (France)

^d Lab des Mat et du Genie Phys   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; ELECTRONS; MASS SPECTROMETRY; PHONONS; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRON PHONON INTERACTION; ISOELECTRONIC COMPOUNDS; NIOBIUM SILICIDE; POINT CONTACT SPECTROSCOPY; TANTALUM SILICIDE; VANADIUM SILICIDE;

SPECTROSCOPY;

EID: 0030282764     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00478-4     Document Type: Article

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