Paramagnetic centers and dopant excitation in crystalline silicon carbide

Applied Spectroscopy

Volumn 50, Issue 11, 1996, Pages 1428-1434

  Gerardi, Gary J ^a   Poindexter, Edward H ^b   Keeble, David J ^c  

^a WILLIAM PATERSON UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF DUNDEE   (United Kingdom)

Author keywords

Dopant excitation; SiC defects; SiC dopants; Silicon carbide EPR; Wide bandgap semiconductors

Indexed keywords

ALUMINUM; PARAMAGNETIC RESONANCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THERMAL EFFECTS;

DOPANT EXCITATION; PARAMAGNETIC CENTERS;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 0030281841     PISSN: 00037028     EISSN: None     Source Type: Journal    
DOI: 10.1366/0003702963904755     Document Type: Article

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