Design of a test structure to evaluate electro-thermomigration in power ICs

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1875-1878

  De Munari, I ^a   Speroni, F ^b   Reverberi, M ^a   Neva, C ^b   Lonzi, L ^b   Fantini, F ^a  

^a UNIVERSITY OF PARMA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC HEATING ELEMENTS; ELECTROMIGRATION; POWER ELECTRONICS; THERMAL EFFECTS; THERMAL GRADIENTS; ELECTRIC VARIABLES MEASUREMENT; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT;

THERMOMIGRATION PROCESS; ELECTRIC TEST STRUCTURES; TEMPERATURE MONITORS; THERMOMIGRATION;

INTEGRATED CIRCUIT TESTING;

EID: 0030274033     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00219-3     Document Type: Article

References (4)

1. I. De Munari, A. Scorzoni, F. Tamarri, D. Govoni, F. Corticelli and F. Fantini, Drawbacks to Using NIST Electromigration Test-Structures to Test Bamboo Metal Lines, IEEE Trans. Electron Devices, 41 (12), 2276-2280, 1994.
2. G.L. Baldini, I. De Munari, A. Scorzoni and F. Fantini, Electromigration in Thin-Films for Microelectronics, Microelectron. Reliab., 33 (11/12), 1779-1805, 1993.
3. Standard Guide for Design of Flat, Straight-Line Test Structures for detecting Metallization Open-Circuit or Resistance-Increase Failure Due to Electromigration, American Society for Testing and Materials (ASTM) standard, designation F 1259-89.
4. ABAQUS User Manual (ver. 5.4), Hibbit, Karlsson & Sorensen.