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Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1839-1846

Wafer Level Reliability: Process control for reliability

Author keywords

[No Author keywords available]

Indexed keywords

PROCESS CONTROL; RELIABILITY; SEMICONDUCTOR DEVICE TESTING; WSI CIRCUITS; DEGRADATION; FEEDBACK CONTROL; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; NETWORK COMPONENTS; STRESSES;

EID: 0030274030     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00211-9     Document Type: Article
Times cited : (5)

References (3)
  • 1
    • 16344376843 scopus 로고
    • Reliability implications of nitrogen contamination during deposition of sputtered aluminum/silicon metal films
    • J. Klema, et. al., Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films, IEEE International Reliability Physics Proceedings, 1984
    • (1984) IEEE International Reliability Physics Proceedings
    • Klema, J.1
  • 2
    • 16344380180 scopus 로고
    • Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO2
    • J. S. Suehle, et al. Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown in Intrinsic Thin SiO2, IEEE International Reliability Physics Proceedings, 1994
    • (1994) IEEE International Reliability Physics Proceedings
    • Suehle, J.S.1
  • 3
    • 30244475710 scopus 로고
    • Thermal investigations on constitution and aging of aluminium-copper alloys with low copper content
    • NR 169
    • J. Borelius, et. al., Thermal Investigations on Constitution and Aging of Aluminium-Copper Alloys with Low Copper Content, Handlingar, NR 169, 1943
    • (1943) Handlingar
    • Borelius, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.