Nanoscopic evaluation of semiconductor properties by scanning probe microscopies

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1767-1774

  Balk, L J ^a   Heiderhoff, R ^a   Koschinski, P ^a   Maywald, M ^a  

^a UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; IMAGING TECHNIQUES; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICES; THERMAL CONDUCTIVITY OF SOLIDS; TOPOLOGY; ELECTRIC SPACE CHARGE; ELECTRON BEAMS; MECHANICAL PROPERTIES; NANOTECHNOLOGY;

NANOMETER RESOLUTION; SCANNING FORCE MICROSCOPY; TOPOLOGICAL CORRELATION;

SEMICONDUCTOR MATERIALS;

EID: 0030274012     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00194-1     Document Type: Article

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