Study of the soft leakage current induced ESD on LDD transistor

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1707-1710

  Wada, Tetsuaki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ELECTROSTATICS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES; ELECTRON TUNNELING; MOSFET DEVICES; SEMICONDUCTING SILICON; SILICA; VOLTAGE MEASUREMENT;

ELECTROSTATIC DISCHARGES; LIGHTLY DOPED DRAIN (LDD) TRANSISTORS; N-CHANNEL TRANSISTORS; BAND TUNNELING CURRENT; ELECTROSTATIC DISCHARGE (ESD); INTERFACE TRAPS;

GATES (TRANSISTOR); TRANSISTORS;

EID: 0030274003     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00179-5     Document Type: Article

References (5)

1. F.C. Hus and H.R. Grinolds, IEEE E. D. Letters, vol, EDL-5, No.3 March (1984)
2. C. Hu, IEEE IEDM, Dig.Tech. Papers, pp.176(1983)
3. S.N. Shabde, et. al, in Proc., IRPS, pp.165-168(1984)
4. C. Duvvury, et. al, in Proc., IRPS, pp.199-205(1986)
5. T.Wada, in Proc., EOS/ESD Symposium,pp.186-191(1995)