Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS-transistors

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1743-1746

  Musshoff, C ^a   Wolf, H ^a   Gieser, H ^b   Egger, P ^b   Guggenmos, X ^c  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b ATIS Appl Test of Intgd Circuits   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRIC EQUIPMENT PROTECTION; ELECTROSTATICS; FAILURE ANALYSIS; PHYSIOLOGICAL MODELS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; TRANSISTORS;

FAILURE SIGNATURES; FAILURE THRESHOLD; HUMAN BODY MODEL ELECTROSTATIC DISCHARGE TESTERS; RISETIME EFFECTS; TRANSMISSION LINE PULSING (TLP); FAILURE THRESHOLDS; HUMAN BODY MODEL;

MOSFET DEVICES; MOS DEVICES;

EID: 0030274001     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00188-6     Document Type: Article

References (7)

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