Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5%Cu lines

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1691-1694

  Scorzoni, A ^a   De Munari, I ^a,b   Balboni, R ^a   Tamarri, F ^a   Garulli, A ^a   Fantini, F ^b  

^a CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; COALESCENCE; ELECTRIC CURRENTS; ELECTRIC LINES; ELECTRIC RESISTANCE; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; ALUMINUM; COMPOSITION EFFECTS; COPPER; ELECTRIC CONDUCTORS; ELECTRIC RESISTANCE MEASUREMENT; METALLOGRAPHIC MICROSTRUCTURE; STRESSES;

METAL LINES; WAFER LEVEL HIGH RESOLUTION RESISTOMETRIC TECHNIQUE; STRESSING CURRENTS;

ELECTROMIGRATION;

EID: 0030273989     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00175-8     Document Type: Article

References (5)

1. C.-K. Hu, M. B. Small, P. S. Ho, Electromigration In Al(Cu) Two-Level Structures: Effect of Cu and Kinetics of Damage Formation, J. Appl. Phys, 74, 969-978 (1993).
2. A. Scorzoni, I. DeMunari, H. Stulens, V. D'Haeger, The Influence of Thermal-Mechanical Effects on Resistance Changes During and After Electromigration Experiments, Mat. Res. Soc. Symp. Proc., 391, 513-519 (1995).
3. J. E. Sanchez, Jr., V. Pham, Interpretation of Resistance Changes During Interconnect Reliability Testing, Mat. Res. Soc. Symp. Proc., 338, 459-464 (1994).
4. C. Kim, S. I. Selister, J. W. Morris, Jr., Microstructural Mechanism of Electromigration Failure in Narrow Interconnects, Mat. Res. Soc. Symp. Proc., 309, 127-132 (1993).
5. W. C. Shih, A. L. Greer, Electromigration Damage and Failure Distributions in Al-4wt.%Cu Interconnects, Mat. Res. Soc. Symp. Proc., 391, 391-396 (1995).