Enhancement of tbd of MOS gate oxides with a single-step pre-stress prior to a CVS in the Fowler-Nordheim regime

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1647-1650

  Martin, A ^a   Ribbrock, T ^b   O'Sullivan, P ^a   Mathewson, A ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); OXIDES; RELIABILITY; STRESSES; CAPACITORS; ELECTRIC CHARGE; PRESTRESSING; THERMAL STRESS;

CHARGE CARRIER TRAPPING; CHARGE THRESHOLD; FOWLER-NORDHEIM STRESSES; POWER LAW RELATION; VOLTAGE STRESS; FOWLER NORDHEIM STRESS;

MOS DEVICES;

EID: 0030273980     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00165-5     Document Type: Article

References (12)

1. A. Martin et.al., Proc.ESREF, 95 (1995).
2. A. Martin et.al., Proc.IEEE IRW, 81 (1995).
3. A. Martin et.al., Proc.IEEE IRW, 158 (1995).
4. R.-P. Vollertsen et.al., Proc.ESREF, 195 (1993).
5. D.R. Wolters et.al., Philips Res.Journal, vol.40, 137 (1985).
6. J.C. King et.al., Proc.IEEE IEDM, 597 (1994).
7. A. Strong et.al., Proc.IEEE IRW, 165 (1995).
8. T. Brożek et.al., Solid States Electronics., vol.36, to be published in 1996.
9. A. Martin et.al., Proc.IEEE IRPS, 67 (1996).
10. M.-S. Liang et.al., Proc.IEEE IEDM, 396 (1981).
11. Z.A. Weinberg et.al., Journal of Applied Physics, vol.61, 1947 (1987).
12. D. Arnold et.al., Physical Review B, vol.49, 10278 (1994).