A power IC technology with excellent cross-talk isolation

IEEE Electron Device Letters

Volumn 17, Issue 10, 1996, Pages 467-469

  Chan, Wilson W T ^a,c   Sin, Johnny K O ^a,c   Mok, Philip K T ^a,c   Wong, S Simon ^a,b,c  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b STANFORD UNIVERSITY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; CROSSTALK; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; MOS DEVICES; SEMICONDUCTOR DIODES;

CROSSTALK ISOLATION; POWER INTEGRATED CIRCUITS;

INTEGRATED CIRCUITS;

EID: 0030271038     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.537077     Document Type: Article

References (9)

1. Q. Huang and G. A. J. Amaraturnga, "Monolithic integration of 5 V CMOS and high voltage devices," IEEE Electron. Device Lett., vol. 13, no. 11, pp. 575-577, 1992.
2. S. Q. Robb and J. L. Sutor, "Recent advances in power integrated circuits with high level integration," in Proc. 6th ISPSD, 1994, pp. 343-348.
3. T. P. Chow, D. N. Pattanayak, B. J. Baliga, M. S. Adler, W. A. Hennessy, and C. E. Logan, "Interaction between monolithic, junction-isolated G lateral insulated-gate bipolar transistors," IEEE Trans. Electron Devices, vol. 38, no. 2, pp. 310-315, 1991.
4. S. Mukherjee, M. Amato, and V. Rumennik, "Influence of device structure on the transient and steady state characteristics of LIGT," in Electrochem. Soc. Spring Meeting Ext. Abstracts, 1987, vol. 87-1, pp. 158-159.
5. A. Q. Huang and G. A. J. Amaraturnga, "The influence of an LIGBT on CMOS latch up in power integrated circuit," IEEE Trans. Electron Devices, vol. 42, no. 10, pp. 1873-1874, 1995.
6. M. Bafleur, J. Buxo, M. Puig Vidal, P. Givelin, V. Macary, and G. Sarrabarouse, "Application of a floating well concept to a latch-up-free, low-cost, smart power high-side switch technology," IEEE Trans. Electron Devices, vol. 40, no. 7, pp. 1340-1342, 1993.
7. W. W. T. Chan, J. K. O. Sin, and S. S. Wong, "An effective cross-talk isolation structure for power IC applications," in IEDM Tech. Dig., 1995, pp. 971-974.
8. TMA TSUPREM-4 User's Manual, Version 5, Technology Modeling Associates, Inc., 1991.
9. D. R. Disney and J. D. Plummer, "SOI LIGBT devices with a dual p-well implant for improved latching characteristics," in Proc. 5th ISPSD, 1993, pp. 254-258.