Bistability and optical switching in a polarization-bistable laser diode

IEEE Journal of Quantum Electronics

Volumn 32, Issue 10, 1996, Pages 1767-1776

  Okada, Masakatsu ^a,b,c,d,e,f   Nishio, Koichi ^a,e,f  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^d Broadcasting Sci Res Laboratories

^e RITSUMEIKAN UNIVERSITY   (Japan)

^f JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GAIN MEASUREMENT; LASER PULSES; LASER TUNING; LIGHT POLARIZATION; MATHEMATICAL TECHNIQUES; OPTICAL BEAM SPLITTERS; OPTICAL BISTABILITY; OPTICAL RESOLVING POWER; OPTICAL SWITCHES; SWITCHING;

CAVITY RESONANT FREQUENCY; INJECTION CURRENT CHARACTERISTICS; OPTICAL INPUT PULSES; OPTICAL SWITCHING; POLARIZATION BISTABLE LASER DIODE;

SEMICONDUCTOR LASERS;

EID: 0030270321     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.538783     Document Type: Article

References (18)

1. Y. C. Chen and J. M. Liu, "Polarization bistability in semiconductor laser: Rate equation analysis," Appl. Phys. Lett., vol. 50, pp. 1406-1408, May 1987.
2. _, "Switching mechanism in pobrization-bistable semiconductor lasers," Opt. Quantum Electron., vol. 19, pp. S93-S102, 1987.
3. C. L. Tang, A. Schremer, and T. Fujita, "Bistability in two-mode semiconductor lasers via gain saturation," Appl. Phys. Lett., vol. 51, pp. 1392-1394, Nov. 1987.
4. B. Rheinlander, A. Klehr, O. Ziemann, V. Gottschlach, and G. Oelgart, "Room temperature polarization bistability in 1.3 μm InGaAsP/InP ridge waveguide lasers," Opt. Commun., vol. 80, pp. 259-261, Jan. 1991.
5. Y. Ozeki, J. E. Johnson, and C. L. Tang, "Polarization bistability in semiconductor lasers with intracavity multiple quantum well saturable absorbers," Appl. Phys. Lett., vol. 58, pp 1958-1960, May 1991.
6. Y. Ozeki and C. L. Tang, "Polarization switching and bistability in an external cavity laser with a polarization-sensitive saturable absorber," Appl. Phys. Lett., vol. 58, pp. 2214-2216, May 1991.
7. B. M. Yu and J. M. Liu, "Polarization-dependent gain, gain nonlinearities, and emission characteristics of internally strained InGaAsP/InP semiconductor lasers," J. Appl. Phys., vol. 69, pp. 7444-7459, June 1991.
8. H. Kawaguchi, I. H. White, M. J. Offside, and J. E. Carroll, "Ultrafast switching in polarization-bistable laser diodes," Opt. Lett., vol. 17, pp. 130-132, Jan. 1992.
9. H. Kawaguchi, "Polarization bistable laser diodes," Int. J. Nonlinear Opt. Phys., vol. 2, pp. 367-389, 1993.
10. H. Kawaguchi, T. Irie, and M. Murakami, "Pitchfork bifurcation polarization bistability in laser diodes with external cavities," IEEE J. Quantum Electron., vol. 31, pp. 447-455, Mar. 1995.
11. H. Kawaguchi, K. Inoue, T. Matsuoka, and K. Otsuka, "Bistable output characteristics in semiconductor laser injection locking," IEEE J. Quantum Electron., vol. QE-21, pp. 1314-1317, Sept. 1985.
12. W. F. Sharfin and M. Dagenais, "Dynamics of optically switched bistable diode laser amplifiers," IEEE J. Quantum Electron., vol. QE-23, pp. 303-308, Mar. 1987.
13. Y. Mon, "Dynamic properties of transverse-magnetic wave injected semiconductor lasers," IEEE J. Quantum Electron., vol. 27, pp. 2415-2421, Nov. 1991.
14. M. Okada, H. Kikuchi, K. Takizawa, and H. Fujikake, "Optical bistability and set-reset operation of a Fabry-Perot semiconductor laser amplifier with two detuned light injections," IEEE J. Quantum Electron., vol. 27, pp. 2003-2015, Aug. 1991.
15. M. Okada and M. Hashimoto, "Optical multistability and wavelength switching of a Fabry-Perot semiconductor laser with multi-detuned light injections," Opt. Review, vol. 2, pp. 377-382, 1995.
16. W. E. Lamb, "Theory of an optical maser," Phys. Rev., vol. 134, pp. A1429-A1450, June 1964.
17. K. Shimoda, Introduction to Laser Physics. Berlin: Springer, 1984.
18. M. Takahashi, P. Vaccaro, K. Fujita, and T. Watanabe, "InGaAs/GaAs strained-layer QW vertical cavity surface emitting laser structures grown on GaAs(311) substrates by MBE," in Proc. MRS 1995 Fall Meeting, Optoelectron. Mat., to be published.