Raman scattering lineshapes in GaAs and InP

Solid State Communications

Volumn 100, Issue 4, 1996, Pages 263-267

  Kernohan, E T M ^a   Phillips, R T ^a   Bairamov, B H ^a   Ritchie, D A ^a   Simmons, M Y ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A. semiconductors; D. electron phonon interactions; D. phonons

Indexed keywords

LIGHT POLARIZATION; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR PLASMAS;

ANHARMONIC DECAY LIFETIME; FULL WIDTH HALF MAXIMUM (FWHM); INJECTION POWER; LINEAR POLARIZATIONS; PHONON ENERGY; PHOTOINJECTED PLASMA; RESONANT EXCITATION; STOKE'S SHIFT;

RAMAN SCATTERING;

EID: 0030269762     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00411-5     Document Type: Article

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