A modified Stillinger-Weber potential for modelling silicon surfaces

Surface Science

Volumn 366, Issue 1, 1996, Pages 177-184

  Stephenson, P C L ^a,b   Radny, M W ^a   Smith, P V ^a  

^a UNIVERSITY OF NEWCASTLE   (Australia)

^b UNIVERSITY OF KENT   (United Kingdom)

Author keywords

Adatoms; Computer simulations; Low index single crystal surfaces; Molecular dynamics; Semi empirical models and model calculations; Silicon; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography

Indexed keywords

ATOMS; COMPUTER SIMULATION; MATHEMATICAL MODELS; MELTING; MOLECULAR DYNAMICS; MORPHOLOGY; RELAXATION PROCESSES; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACE STRUCTURE; SURFACE TREATMENT; SURFACES;

BULK SILICON; LOW INDEX SINGLE CRYSTAL SURFACES; STILLINGER-WEBER POTENTIAL; SURFACE TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0030269659     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00801-1     Document Type: Article

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