Total charge capacitor model for short-channel MESFET's

IEEE Microwave and Guided Wave Letters

Volumn 6, Issue 10, 1996, Pages 351-353

  Webster, Danny ^a,c   Darvishzadeh, Mahmoud ^b   Haigh, David ^a,c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; COMPUTER SIMULATION; CURVE FITTING; ELECTRIC CHARGE; GATES (TRANSISTOR); MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POLYNOMIALS; SEMICONDUCTOR DEVICE STRUCTURES;

BIAS DEPENDENCE; CHARGE VOLTAGE RELATIONSHIP; S PARAMETERS; TOTAL CHARGE FUNCTION; TOTAL CHARGE MODELS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030269572     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.536942     Document Type: Article

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