On the analysis of C-V curves for high resistivity substrates

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1519-1521

  Del Cueto, M Estrada ^b   Altuzarra, A C ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; CAPACITANCE MEASUREMENT; CAPACITORS; ELECTRIC CURRENTS; ELECTRODES; MOSFET DEVICES; NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

CAPACITANCE METER; DOPING DENSITY; HIGH RESISTIVITY SUBSTRATES; VOLTAGE DROP;

SEMICONDUCTOR MATERIALS;

EID: 0030269340     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00064-0     Document Type: Article

References (2)

1. S. A. Steigerwald Audet, High purity silicon soft-ray sensor arrays, PhD Thesis, Delft Technische Universiteit (1990).
2. S. M. Sze, Physics of Semiconductor Devices, 2nd Edn. Wiley-Interscience, New York (1981).