메뉴 건너뛰기




Volumn 106, Issue 5, 1996, Pages 321-329

The silicon path to the kilogram

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0030268080     PISSN: 0030834X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (19)

References (31)
  • 1
    • 0043162238 scopus 로고
    • Advancement of science
    • Report Brit. Association Adv. Science
    • Maxwell, J.C.: Advancement of Science. In: Report Brit. Association Adv. Science XL, 1870, Math. Phys. Sec., 215
    • (1870) Math. Phys. Sec. , vol.40 , pp. 215
    • Maxwell, J.C.1
  • 3
    • 0011007295 scopus 로고
    • The 1986 adjustment of the fundamental physical constants
    • Cohen, E.R.; Taylor, B.N.: The 1986 adjustment of the fundamental physical constants. In: Rev. Mod. Phys. 59, (1987), 1121-1148
    • (1987) Rev. Mod. Phys. , vol.59 , pp. 1121-1148
    • Cohen, E.R.1    Taylor, B.N.2
  • 4
    • 0007519762 scopus 로고
    • Conference issue: International workshop on the Avogadro constant and the representation of the silicon mole
    • Conference issue: International Workshop on the Avogadro Constant and the Representation of the Silicon Mole. In: Metrologia 31, (1994), 156-276
    • (1994) Metrologia , vol.31 , pp. 156-276
  • 5
    • 0001349074 scopus 로고
    • An X-ray interferometer
    • Bonse, U.; Hart, M.: An X-ray interferometer. In: Appl. Phys. Lett. 6, (1965), 155-156
    • (1965) Appl. Phys. Lett. , vol.6 , pp. 155-156
    • Bonse, U.1    Hart, M.2
  • 9
    • 0029368490 scopus 로고
    • Absolute measurement of lattice spacing d(220) in floating zone silicon crystal
    • Fujimoto, H.; Nakayama, K.; Tanaka, M.; Misawa, G.: Absolute Measurement of lattice spacing d(220) in floating zone silicon crystal. In: Jpn. J. Appl. Phys. 34, (1995), 5065-5069
    • (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 5065-5069
    • Fujimoto, H.1    Nakayama, K.2    Tanaka, M.3    Misawa, G.4
  • 10
    • 0024064049 scopus 로고
    • Lattice distortions induced by carbon in silicon
    • Windisch, D.; Becker, P.: Lattice distortions induced by carbon in silicon. In: Phil. Mag. A 58, (1988), 435-443
    • (1988) Phil. Mag. A , vol.58 , pp. 435-443
    • Windisch, D.1    Becker, P.2
  • 12
    • 0011282141 scopus 로고    scopus 로고
    • private communication
    • Zulehner, W., private communication
    • Zulehner, W.1
  • 13
  • 15
    • 0000571460 scopus 로고
    • A high-resolution diffuse X-ray scattering study of defects in dislocation-free silicon crystals grown by the float-zone method and comparison with czochralski-grown crystals
    • Lal, K.; Bhagavannarayana, G.: A high-resolution diffuse X-ray scattering study of defects in dislocation-free silicon crystals grown by the float-zone method and comparison with Czochralski-grown crystals. In: J. Appl. Cryst. 22, (1989), 209-215; Ramanan, R.R.; Bhagavannarayana, G.; Lal, K.: A comparative study of point defect aggregates in high purity single crystals of silicon grown by the Czochralski and the float-zone methods by diffuse X-ray scattering technique. In: Semiconductor Devices, ed. by K. Lal, Narosa Publ. House, New Delhi, 1996, 269-273
    • (1989) J. Appl. Cryst. , vol.22 , pp. 209-215
    • Lal, K.1    Bhagavannarayana, G.2
  • 16
    • 0011283764 scopus 로고    scopus 로고
    • A comparative study of point defect aggregates in high purity single crystals of silicon grown by the czochralski and the float-zone methods by diffuse X-ray scattering technique
    • ed. by K. Lal, Narosa Publ. House, New Delhi
    • Lal, K.; Bhagavannarayana, G.: A high-resolution diffuse X-ray scattering study of defects in dislocation-free silicon crystals grown by the float-zone method and comparison with Czochralski-grown crystals. In: J. Appl. Cryst. 22, (1989), 209-215; Ramanan, R.R.; Bhagavannarayana, G.; Lal, K.: A comparative study of point defect aggregates in high purity single crystals of silicon grown by the Czochralski and the float-zone methods by diffuse X-ray scattering technique. In: Semiconductor Devices, ed. by K. Lal, Narosa Publ. House, New Delhi, 1996, 269-273
    • (1996) Semiconductor Devices , pp. 269-273
    • Ramanan, R.R.1    Bhagavannarayana, G.2    Lal, K.3
  • 17
    • 85034787005 scopus 로고
    • Der einfluß von fremdatomen auf den gitter-parameter von silizium
    • Physikalisch-Technische Bundesanstalt Braunschweig
    • Becker, P.: Der Einfluß von Fremdatomen auf den Gitter-parameter von Silizium, PTB Report APh-28, Physikalisch-Technische Bundesanstalt Braunschweig, 1986
    • (1986) PTB Report APh-28
    • Becker, P.1
  • 18
    • 0024053537 scopus 로고
    • Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors
    • Scheffler, M.; Dabrowski, J.: Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors. In: Phil. Mag. A. 58, (1988), 107-121
    • (1988) Phil. Mag. A. , vol.58 , pp. 107-121
    • Scheffler, M.1    Dabrowski, J.2
  • 19
    • 0028444795 scopus 로고
    • Influence of the isotopic composition on the thermal expansion of crystalline Si
    • Biernacki, S.; Scheffler, M.: Influence of the isotopic composition on the thermal expansion of crystalline Si. In: J. Phys.: Condens. Matter 6, (1994), 1-9; Pavone, P.; Baroni, S.: Dependence of the crystal lattice constant on isotopic composition: theory and ab initio calculations for C, Si, and Ge. In: Solid State Comm. 90, (1994), 295-297
    • (1994) J. Phys.: Condens. Matter , vol.6 , pp. 1-9
    • Biernacki, S.1    Scheffler, M.2
  • 20
    • 0028428752 scopus 로고
    • Dependence of the crystal lattice constant on isotopic composition: Theory and ab initio calculations for C, Si, and Ge
    • Biernacki, S.; Scheffler, M.: Influence of the isotopic composition on the thermal expansion of crystalline Si. In: J. Phys.: Condens. Matter 6, (1994), 1-9; Pavone, P.; Baroni, S.: Dependence of the crystal lattice constant on isotopic composition: theory and ab initio calculations for C, Si, and Ge. In: Solid State Comm. 90, (1994), 295-297
    • (1994) Solid State Comm. , vol.90 , pp. 295-297
    • Pavone, P.1    Baroni, S.2
  • 22
    • 0011320744 scopus 로고
    • Ensuring international comparability of gas measurements through traceability to the mole, our SI unit for amount of substance
    • Ed. Vansant, E.F., Elsevier Science B.V.
    • De Bièvre, P.: Ensuring international comparability of gas measurements through traceability to the mole, our SI unit for amount of substance. In: Separation Technology, Ed. Vansant, E.F., Elsevier Science B.V., (1994), 919-935
    • (1994) Separation Technology , pp. 919-935
    • De Bièvre, P.1
  • 23
    • 0000322572 scopus 로고
    • Metrologie in der chemie: Rückführung chemisch-analytischer messungen auf die SI-Einheiten
    • Richter, W.; Dube, G.; Keyser, U.; Spitzer, P.: Metrologie in der Chemie: Rückführung chemisch-analytischer Messungen auf die SI-Einheiten. In: PTB-Mitt. 104, (1994), 312-322
    • (1994) PTB-Mitt. , vol.104 , pp. 312-322
    • Richter, W.1    Dube, G.2    Keyser, U.3    Spitzer, P.4
  • 24
    • 0001130440 scopus 로고
    • Fabrication and sphericity measurements of single-crystal silicon spheres
    • Leistner, A.J., Giardini, W.J.: Fabrication and Sphericity Measurements of single-crystal silicon spheres. In: Metrologia 31, (1995), 231-243
    • (1995) Metrologia , vol.31 , pp. 231-243
    • Leistner, A.J.1    Giardini, W.J.2
  • 25
    • 0011373703 scopus 로고    scopus 로고
    • unpublished laboratory report
    • Becker, P., unpublished laboratory report
    • Becker, P.1
  • 26
    • 0029290316 scopus 로고
    • Absolute measurement of the density of silicon crystals in vacuo for a determination of the Avogadro constant
    • Fujii, K.; Tanaka, M.; Nezu, Y.; Sakuma, A.; Leistner, A.J.; Giardini, W.J.: Absolute measurement of the density of silicon crystals in vacuo for a determination of the Avogadro constant. In: IEEE Trans. Instrum. Meas. 44, (1995), 542-545
    • (1995) IEEE Trans. Instrum. Meas. , vol.44 , pp. 542-545
    • Fujii, K.1    Tanaka, M.2    Nezu, Y.3    Sakuma, A.4    Leistner, A.J.5    Giardini, W.J.6
  • 28
    • 0011354385 scopus 로고
    • Density difference measurements on silicon single-crystals by the temperature-of-flotation method
    • Physikalisch-Technische Bundesanstalt Braunschweig
    • Kozdon, A.; Wagenbreth, H.; Hoburg, D.: Density difference measurements on silicon single-crystals by the temperature-of-flotation method, PTB-Report W-43, Physikalisch-Technische Bundesanstalt Braunschweig 1990
    • (1990) PTB-Report W-43
    • Kozdon, A.1    Wagenbreth, H.2    Hoburg, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.