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Applied Physics A: Materials Science and Processing

Volumn 63, Issue 4, 1996, Pages 359-370

Two groups of misfit dislocations in GaAs on Si

(1) Tamura, M a,b,c

a Optoelectronics Technology Research Laboratory (Japan)

b JRCAT (Japan)

c HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THERMAL STRESS;

BEAM CURRENT; COMPLETE DISLOCATIONS; INCIDENT ANGLE; PARTIAL DISLOCATIONS; TWO STEP GROWTH PROCEDURE;

TRANSMISSION ELECTRON MICROSCOPY;

EID: 0030264681 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/BF01567327 Document Type: Article

Times cited : (19)

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