Material analysis and characterization on zone refined and zone leveled vertical zone melt GaAs for radiation spectrometers

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 380, Issue 1-2, 1996, Pages 84-87

  McGregor, D S ^a   Antolak, A J ^a   Cross, E S ^a   Fang, Z Q ^f   Goorsky, M S ^c   Henry, R L ^d   James, R B ^a   Look, D C ^f   Mier, M G ^e   Morse, D H ^a   Nordquist, P E R ^d   Olsen, R ^a   Schieber, M ^a   Schlesinger, T E ^b   Soria, E ^a   Toney, J E ^b   Van Scyoc, J ^b   Yoon, H ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e WRIGHT PATTERSON AIR FORCE BASE   (United States)

^f WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; GAMMA RAYS; LEAKAGE CURRENTS; RADIATION DETECTORS; ZONE MELTING;

DEEP DONOR DEFECT CENTERS; LIQUID ENCAPSULATED CZOCHRALSKI; MATERIAL ANALYSIS; RADIATION SPECTROMETERS; VERTICAL GRADIENT FREEZE; VERTICAL ZONE MELT; ZONE REFINEMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030264311     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00337-3     Document Type: Article

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